JAN2N3421 Datasheet, PDF (4/6 Pages) Microsemi Corporation – NPN MEDIUM POWER SILICON TRANSISTOR

2N3418S thru 2N3421S
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted) continued
SWITCHING CHARACTERISTICS
Parameters / Test Conditions (for all symbols)
Delay Time
Rise Time
Storage Time
Fall Time
Turn-Off Time
V_BE(off) = -3.7 V,
I_C = 1.0 A, I_B1 = 100 mA
V_BE(off) = -3.7 V,
I_C = 1.0 A, I_B2 = -100 mA
V_BE(off) = -3.7 V, I_C = 1.0 A,
I_B2 = -100 mA, R_L = 20 Ω
Symbol
t_d
t_r
t_s
t_f
t _off
Min.
Max.
0.08
0.22
1.10
0.20
1.20
SAFE OPERATING AREA (See graph below and reference MIL-STD-750, method 3053)
DC Test
T_C = +100 °C, 1 cycle, t > 1.0 s
Test 1
V_CE = 5.0 V, I_C = 3.0 A
Test 2
V_CE = 37 V, I_C = 0.4 A
Test 3
V_CE = 60 V, I_C = 0.185 A
V_CE = 80 V, I_C = 0.12 A
2N3418S, 2N3420S
2N3419S, 2N3421S
Clamped Switching
T_A = +25 °C, I_B = 0.5 A, I_C = 3.0 A
Unit
µs
µs
µs
COLLECTOR TO EMITTER VOLTAGE V_CE (VOLTS)
Maximum Safe Operating Area (continuous dc)
T4-LDS-0192-1, Rev. 1 (111684)
©2011 Microsemi Corporation
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