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APT50GS60BRDQ2 Datasheet, PDF (6/7 Pages) Microsemi Corporation – Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode | |||
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VCC
APT40DQ60
IC
VCE
A
D.U.T.
Figure 22, Inductive Switching Test Circuit
Gate Voltage
90%
TJ = 125°C
td(off)
90%
tf
10%
Switching Energy
Collector Voltage
Collector Current
0
Figure 24, Turn-off Switching Waveforms and Deï¬nitions
APT50GS60B_SRDQ2(G)
Gate Voltage
10%
td(on)
tr
90%
5%
5%
10%
Switching Energy
TJ = 125°C
Collector Current
Collector Voltage
Figure 23, Turn-on Switching Waveforms and Deï¬nitions
FOOT NOTE:
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 224µH, RG = 25â¦, IC = 50A
3 Short circuit time: VGE = 15V, VCC ⤠600V, TJ ⤠150°C
4 Pulse test: Pulse width < 380µs, duty cycle < 2%
5 Co(cr) is deï¬ned as a ï¬xed capacitance with the same stored charge as Coes with VCE = 67% of V(BR)CES.
6 Co(er) is deï¬ned as a ï¬xed capacitance with the same stored energy as Coes with VCE = 67% of V(BR)CES. To calculate Co(er) for any value of
VCE less than V(BR)CES, use this equation: Co(er) = 5.57E-8/VDS^2 + 7.15E-8/VDS + 2.75E-10.
7 RG is external gate resistance, not including internal gate resistance or gate driver impedance (MIC4452).
8 Eon1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the
IGBT turn-on switching loss. It is measured by clamping the inductance with a Silicon Carbide Schottky diode.
9 Eon2 is the inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on energy.
10 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the speciï¬cations and information contained herein.
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