APT50GS60BRDQ2 Datasheet, PDF (5/7 Pages) Microsemi Corporation – Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode

TYPICAL PERFORMANCE CURVES
200
100 _ICM
200
100 _ICM
APT50GS60B_SRDQ2(G)
10
V_CE(on)
13µs
100µs
1ms
10ms
1
100ms
DC line
T_J = 125°C
T_C = 75°C
0.1
1
10
100
800
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
Figure 17, Forward Safe Operating Area
10
V_CE(on)
13µs
100µs
1ms
1
T_J = 150°C
T_C = 25°C
10ms
100ms
DC line
Scaling for Different Case & Junction
Temperatures:
0.1
I_C = I_{C(TC = 25°C)}*(T_J - T_C)/125
1
10
100
800
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
Figure 18, Maximum Forward Safe Operating Area
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
10^-5
0.9
0.7
0.5
Note:
0.3
0.1
SINGLE PULSE
0.05
t1
t2
Duty Factor D = ^t1/^t2
Peak T_J = P_DM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
T_J (°C)
T_C (°C)
Dissipated Power
(Watts)
0.0731
0.226
0.00606
0.260
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Figure 20, Transient Thermal Impedance Model
160
140
120
100
75°C
80
60
F
max
=
min
(f_max,
f_max2)
0.05
f_max1 = _{td(on) + tr + td(off) + tf}
40 T_J = 125°C
T_C = 75°C
100°C
f_max2 =
P_diss - P_cond
E_on2 + E_off
20
D = 50 %
V_CE = 400V
0 ^{RG = 4.7Ω}
P_diss =
T_J - T_C
R_θJC
0 10 20 30 40 50 60 70 80 90
Figure 21, O^ICp^,e^Cra^Ot^Lin^Lg^ECF^Tre^Oq^Rue^Cn^Uc^Ry^Rv^Es^NC^To^(Alle⁾ ctor Current