APT50GS60BRDQ2 Datasheet, PDF (1/7 Pages) Microsemi Corporation – Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode

APT50GS60BRDQ2(G)
APT50GS60SRDQ2(G)
600V, 50A, V_CE(ON) = 2.8V Typical
Thunderbolt^® High Speed NPT IGBT with Anti-Parallel 'DQ' Diode
The Thunderbolt HS^™ series is based on thin wafer non-punch through (NPT) technology similar to
the Thunderbolt^® series, but trades higher V_CE(ON) for significantly lower turn-on energy E_off. The low
switching losses enable operation at switching frequencies over 100kHz, approaching power MOSFET
performance but lower cost.
An extremely tight parameter distribution combined with a positive V_CE(ON) temperature coefficient
make it easy to parallel Thunderbolts HS^™ IGBT's. Controlled slew rates result in very good noise
TO-247
D³PAK
and oscillation immunity and low EMI. The short circuit duration rating of 10µs make these IGBT's
suitable for motor drive and inverter applications. Reliability is further enhanced by avalanche energy
ruggedness. Combi versions are packaged with a high speed, soft recovery DQ series diode.
Features
Typical Applications
APT50GS60BRDQ2(G)
APT50GS60SRDQ2(G)
• Fast Switching with low EMI
• Very Low E_OFF for Maximum Efficiency
• Short circuit rated
• Low Gate Charge
• ZVS Phase Shifted and other Full Bridge
• Half Bridge
• High Power PFC Boost
• Welding
Single die
IGBT with
separate DQ
diode die
• Tight parameter distribution
• Induction heating
• Easy paralleling
• High Frequency SMPS
• RoHS Compliant
Absolute Maximum Ratings
Symbol Parameter
Rating
I _C1
Continuous Collector Current T_C = @ 25°C
I _C1
Continuous Collector Current T_C = @ 100°C
I_{CM Pulsed Collector Current} ¹
V_{GE Gate-Emitter Voltage}
93
50
195
±30V
SSOA Switching Safe Operating Area
195
E_{AS Single Pulse Avalanche Energy} ²
280
t_SC
Short Circut Withstand Time ³
10
I_F
Diode Continuous Forward Current
T_C = 25°C
90
T_C = 100°C
55
I_{FRM Diode Max. Repetitive Forward Current}
195
Thermal and Mechanical Characteristics
Symbol Parameter
Min
Typ Max
P_D
R_θJC
Total Power Dissipation T_C = @ 25°C
Junction to Case Thermal Resistance
IGBT
Diode
-
-
415
-
-
0.30
0.67
R_{θCS Case to Sink Thermal Resistance, Flat Greased Surface}
-
0.11
-
T_J, T_STG Operating and Storage Junction Temperature Range
-55
-
150
T_L
Soldering Temperature for 10 Seconds (1.6mm from case)
-
-
300
W_{T Package Weight}
-
0.22
-
-
5.9
-
Torque Mounting Torque (TO-247), 6-32 M3 Screw
-
-
10
-
-
1.1
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should be Followed.
Microsemi Website - http://www.microsemi.com
Unit
A
V
mJ
µs
A
Unit
W
°C/W
°C
oz
g
in·lbf
N·m