APT35GP120BG Datasheet, PDF (6/6 Pages) Microsemi Corporation – POWER MOS 7® IGBT

APT30DF120
V_CC
I_C V_CE
A
D.U.T.
Figure 21, Inductive Switching Test Circuit
90%
t _d(off)
Switching
Energy
90%
t_f
Gate Voltage _{T J = 125 C}
Collector Voltage
10%
0
Collector Current
APT35GP120B(G)
10%
t _d(on)
t_r
90%
10%
5%
Switching Energy
Gate Voltage
T_J = 125 C
Collector Current
5%
Collector Voltage
Figure 22, Turn-on Switching Waveforms and Definitions
V_TEST
*DRIVER SAME TYPE AS D.U.T.
A
100uH
A
DRIVER*
V_CE
I_C
V_CLAMP
B
D.U.T.
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, E_ON1 Test Circuit
T0-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Collector
Emitter
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,5225,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.