APT35GP120BG Datasheet, PDF (1/6 Pages) Microsemi Corporation – POWER MOS 7® IGBT

APT35GP120B
APT35GP120BG
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7® IGBT
TO-247
The POWER MOS 7^® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• 100 kHz operation @ 800V, 14A
• 50 kHz operation @ 800V, 25A
• RBSOA rated
G
C
E
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T_C = 25°C unless otherwise specified.
APT35GP120B(G)
UNIT
V_CES
V_GE
V_GEM
I _C1
I _C2
I _CM
RBSOA
P_D
T_J,T_STG
T_L
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T_C = 25°C
Continuous Collector Current @ T_C = 110°C
Pulsed Collector Current ¹ @ T_C = 25°C
Reverse Bias Safe Operating Area @ T_J = 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
1200
±20
±30
96
46
140
140A @ 960V
543
-55 to 150
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BV_CES
V_GE(TH)
V_CE(ON)
I _CES
I _GES
Collector-Emitter Breakdown Voltage (V_GE = 0V, I_C = 250µA)
Gate Threshold Voltage (V_CE = V_GE, I_C = 1mA, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = 35A, T_j = 25°C)
Collector-Emitter On Voltage (V_GE = 15V, I_C = 35A, T_j = 125°C)
Collector Cut-off Current (V_CE = 1200V, V_GE = 0V, T_j = 25°C) ²
Collector Cut-off Current (V_CE = 1200V, V_GE = 0V, T_j = 125°C) ²
Gate-Emitter Leakage Current (V_GE = ±20V)
MIN TYP MAX UNIT
1200
3
4.5
6
Volts
3.3 3.9
3
250
µA
2500
±100 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com