APT35GP120BG Datasheet, PDF (4/6 Pages) Microsemi Corporation – POWER MOS 7® IGBT

35
30
V_GE= 10V
25
20
V_GE= 15V
15
10
V_CE = 600V
5 ^{TJ = 25°C, TJ =125°C}
R_G = 5Ω
L = 100 µH
0
10 20 30 40 50 60 70
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
140
R_G = 5Ω, L = 100µH, V_CE = 600V
120
100
T_J = 25 or125°C,V_GE = 10V
80
60
40
20
0
10 20
T_J = 25 or 125°C,V_GE =10V
30 40 50 60 70
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
5000
V_CE = 600V
R_G = 5 Ω
T_J=125°C,V_GE=15V
4000
T_J=125°C,V_GE=10V
3000
2000
1000
T_J= 25°C,V_GE=15V
T_J= 25°C,V_GE=10V
0
10 20 30 40 50 60 70
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
8000
7000
V_CE = 600V
V_GE = +15V
T_J = 125°C
E_on2 70A
6000
5000
4000
E_off 70A
3000
E_on2 35A
2000
E_on2 17.5A
E_off 35A
1000
E_off 17.5A
0
0
10
20
30
40
50
R_G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT35GP120B(G)
180
160
140
V_GE =15V,T_J=125°C
120
V_GE =10V,T_J=125°C
V_GE =15V,T_J=25°C
100
80
60
V_GE =10V,T_J=25°C
40
V_CE = 600V
20 ^RG ^{= 5Ω}
L = 100 µH
0
10 20 30 40 50 60 70
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
100
90
T_J = 125°C, V_GE = 10V or 15V
80
70
60
50
40
30
T_J = 25°C, V_GE = 10V or 15V
20
10 _{RG = 5Ω, L = 100µH, VCE = 600V}
0
10 20 30 40 50 60 70
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
4000
V_CE = 600V
R_G = 5 Ω
3000
T_J = 125°C, V_GE = 10V or 15V
2000
1000
T_J = 25°C, V_GE = 10V or 15V
0
10 20 30 40 50 60 70
I_CE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
5000
4000
V_CE = 600V
V_GE = +15V
R_G = 5 Ω
E_on2 70A
3000
E_off70A
2000
E_on2 35A
1000 _{Eoff 35A}
E_on2 17.5A
0
E_off 17.5A
0
25
50
75
100 125
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature