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| JANTX2N692 Datasheet, PDF (5/6 Pages) Microsemi Corporation – PNPN SILICON, REVERSE-BLOCKING, POWER TRIODE THYRISTORS | |||
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2N682, 2N683, 2N685 â 2N692
and 2N5206
ELECTRICAL CHARACTERISTICS (continued)
Parameters / Test Conditions
Symbol
Circuit-commutated turn-off time
TC = +120°C minimum; ITM = 10 A;
ton = 100 ±50 μs; di/dt = 5 A/μs minimum;
di/dt = 8 A/μs maximum; reverse voltage at t1 = 15 V minimum;
repetition rate = 60 pps maximum; di/dt = 20 V/μs;
gate bias conditions; gate source voltage = 0 V;
gate source resistance = 100 Ω
VDM = VDRM = 50 V (pk); VRRM = 50 V maximum 2N682
t off
VDM = VDRM = 100 V (pk); VRRM = 100 V maximum 2N683
VDM = VDRM = 200 V (pk); VRRM = 200 V maximum 2N685
VDM = VDRM = 250 V (pk); VRRM = 250 V maximum 2N686
VDM = VDRM = 300 V (pk); VRRM = 300 V maximum 2N687
VDM = VDRM = 400 V (pk); VRRM = 400 V maximum 2N688
VDM = VDRM = 500 V (pk); VRRM = 500 V maximum 2N689
VDM = VDRM = 600 V (pk); VRRM = 600 V maximum 2N690
VDM = VDRM = 700 V (pk); VRRM = 700 V maximum 2N691
VDM = VDRM = 800 V (pk); VRRM = 800 V maximum 2N692
VDM = VDRM = 1,000 V (pk); VRRM = 1,000 V max. 2N5206
Gate controlled turn-on time
VAA = 50 V for 2N682
VAA = 100 V for 2N683, 2N685 through 2N692
and 2N5206
ITM = 10 A; VGG = 10 V; Re = 25 Ω
tp1 = 15 ±5 μs; 4 A/μs ⤠di/dt ⤠200 A/μs.
2N682,
t on
2N683,
2N685
through
2N692 and
2N5206
Min.
Max.
30
30
30
30
30
30
40
40
60
60
60
5
Unit
µs
µs
T4-LDS-0249, Rev. 1 (120183)
©2011 Microsemi Corporation
Page 5 of 6
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