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| JANTX2N692 Datasheet, PDF (4/6 Pages) Microsemi Corporation – PNPN SILICON, REVERSE-BLOCKING, POWER TRIODE THYRISTORS | |||
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2N682, 2N683, 2N685 â 2N692
and 2N5206
ELECTRICAL CHARACTERISTICS (continued)
Parameters / Test Conditions
Reverse blocking current (TC = +120 ºC)
AC method, bias condition D;
f = 60 Hz; VRRM = rated
Forward blocking current (TC = +120 ºC)
AC method, bias condition D;
f = 60 Hz; VDRM = rated
Gate trigger voltage (TC = +120 ºC; Re = 20 Ω
max)
V2 = VDM = 50 V; RL = 140 Ω
V2 = VDM = 100 V; RL = 140 Ω
V2 = VDM = 200 V; RL = 140 Ω
V2 = VDM = 250 V; RL = 650 Ω
V2 = VDM = 300 V; RL = 650 Ω
V2 = VDM = 400 V; RL = 3 k Ω
V2 = VDM = 500 V; RL = 3 k Ω
V2 = VDM = 600 V; RL = 3 k Ω
V2 = VDM = 700 V; RL = 3 k Ω
V2 = VDM = 800 V; RL = 3 k Ω
RVeve=rsVe blo=c1kin0g00cuVr;reRnt =(T3C k=Ω-65 ºC)
AC method, bias condition D;
f = 60 Hz; VRRM = rated
Forward blocking current (TC = -65 ºC)
AC method, bias condition D;
f = 60 Hz; VDRM = rated
Gate trigger voltage and current (TC = -65 ºC)
V2 = VD = 6 V; RL = 50 Ω;
Re = 20 Ω maximum
Exponential rate of voltage rise
Bias condition D; TC = +120°C minimum,
dv/dt = 25 v/μs; repetition rate = 60 pps;
test duration = 15 s;
C = 1.0 μF; RL = 50 Ω
VAA = 50 V
VAA = 100 V
VAA = 200 V
VAA = 250 V
VAA = 300 V
VAA = 400 V
VAA = 500 V
VAA = 600 V
VAA = 700 V
VAA = 800 V
VAA = 1,000 V
Symbol
I RRM2
Min.
I DRM2
2N682
2N683
2N685
2N686
2N687
2N688
V GT2
.25
2N689
2N690
2N691
2N692
2N5206
I RRM3
I DRM3
V GT3
I GT2
2N682
VD
47
2N683
95
2N685
190
2N686
240
2N687
285
2N688
380
2N689
475
2N690
570
2N691
665
2N692
760
2N5206
950
Max.
Unit
5 mA (pk)
5 mA (pk)
V
2 mA (pk)
2 mA (pk)
3
V
80
mA
V
T4-LDS-0249, Rev. 1 (120183)
©2011 Microsemi Corporation
Page 4 of 6
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