JANTX2N692 Datasheet, PDF (3/6 Pages) Microsemi Corporation – PNPN SILICON, REVERSE-BLOCKING, POWER TRIODE THYRISTORS

2N682, 2N683, 2N685 – 2N692
and 2N5206
ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions
Repetitive Peak Reverse Voltage
And
Repetitive peak off-state voltage
2N682
2N683
2N685
2N686
2N687
2N688
2N689
2N690
2N691
2N692
2N5206
(1) Values applicable to zero or negative gate voltage (V_GM).
Symbol
V
(1)
RRM
and
V _DRM
Min.
Max.
50
100
200
250
300
400
500
600
700
800
1,000
Unit
V (pk)
Parameters / Test Conditions
Holding current:
Bias condition D; V_AA = 24 V maximum;
I_TM = I_F1 = 1 A
I_T = I_F2 = 100 mA
trigger voltage source = 10 V
trigger PW = 100 μs (minimum)
R₂ = 20 Ω
Reverse blocking current
AC method, bias condition D;
f = 60 Hz, V_RRM = rated
Forward blocking current
AC method, bias condition D;
f = 60 Hz; V_DRM = rated
Gate trigger voltage and current
V₂ = V_D = 6 V; R_L = 50 Ω;
R_e = 20 Ω maximum
Forward on voltage
I_TM = 50 A(pk) (pulse);
pulse width = 8.5 ms; maximum;
duty cycle = 2 percent maximum
Reverse gate current
V_G = 5 V
Symbol Min.
Max.
Unit
I_H
50
mA
I _RRM1
I _DRM1
V _GT1
I _GT1
V_TM
I_G
2 mA (pk)
2 mA (pk)
3
V
35
mA
2 V (pk)
250
mA
T4-LDS-0249, Rev. 1 (120183)
©2011 Microsemi Corporation
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