APT30GN60K Datasheet, PDF (5/6 Pages) Microsemi Corporation – Resonant Mode Combi IGBT

TYPICAL PERFORMANCE CURVES
3,000
C_ies
1,000
500
100
50
C_oes
C_res
10
0
10
20
30
40
50
V_CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT30GN60K(G)
100
90
80
70
60
50
40
30
20
10
0
0 100 200 300 400 500 600 700
V_CE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.80
0.70
D = 0.9
0.60
0.7
0.50
0.40
0.30
0.20
0.10
0
10^-5
0.5
Note:
0.3
t1
0.1
SINGLE PULSE
0.05
t2
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Junction
temp. (°C)
RC MODEL
0.239
0.00158
Power
(watts)
0.244
0.00349
Case temperature. (°C)
0.258
0.0793
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
130
50
F
max
=
min
(f_max,
f
max2⁾
10
0.05
f_max1 = _{t d(on) + tr + td(off) + tf}
5
T_J = 125°C
T_C = 75°C
f_max2 =
P_diss - P _cond
E _on2 + E _off
D = 50 %
V_CE = 400V
1 ^{RG = 4.3Ω}
P_diss =
T_J - T _C
R _θJC
5 10 15 20 25 30 35 40 45 50 55
I_C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current