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APT30GN60K Datasheet, PDF (4/6 Pages) Microsemi Corporation – Resonant Mode Combi IGBT
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16
14
VGE = 15V
12
10
8
6
4
VCE = 400V
2
TJ = 25°C, or =125°C
RG = 4.3Ω
L = 100µH
0
10 20 30 40 50 60 70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
60
RG = 4.3Ω, L = 100µH, VCE = 400V
50
40
30
20
TJ = 25 or 125°C,VGE = 15V
10
0
10 20 30 40 50 60 70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
3000
2500
VCE = 400V
VGE = +15V
RG = 4.3Ω
2000
TJ = 125°C
1500
1000
500
TJ = 25°C
0
10 20 30 40 50 60 70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
6000
5000
VCE = 400V
VGE = +15V
TJ = 125°C
4000
3000
Eon2,60A
Eoff,60A
2000
1000
Eon2,30A
Eoff,15A
Eoff,30A
Eon2,15A
0
0
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
APT30GN60K(G)
250
200
150
VGE =15V,TJ=125°C
100
VGE =15V,TJ=25°C
50
VCE = 400V
RG = 4.3Ω
L = 100µH
0
10 20 30 40 50 60 70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
100
RG = 4.3Ω, L = 100µH, VCE = 400V
80
TJ = 125°C, VGE = 15V
60
40
TJ = 25°C, VGE = 15V
20
0
10 20 30 40 50 60 70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
1600
1400
VCE = 400V
VGE = +15V
RG = 4.3Ω
TJ = 125°C
1200
1000
800
600
TJ = 25°C
400
200
0
10 20 30 40 50 60 70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
3000
2500
VCE = 400V
VGE = +15V
RG = 4.3Ω
Eon2,60A
2000
1500
Eoff,60A
1000
Eon2,30A
500
Eoff,30A
Eoff,15A
0
Eon2,15A
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
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