APT30GN60K Datasheet, PDF (3/6 Pages) Microsemi Corporation – Resonant Mode Combi IGBT

TYPICAL PERFORMANCE CURVES
90
V_GE = 15V
80
70
T_J = -55°C
60
T_J = 25°C
50
T_J = 125°C
40
30 ^{TJ = 175°C}
20
10
0
0
1
2
3
4
5
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(T_J = 25°C)
90
250µs PULSE
TEST<0.5 % DUTY
80
CYCLE
T_J = -55°C
70
T_J = 25°C
60
T_J = 125°C
50
T_J = 175°C
40
30
20
10
0
0
3
6
9
12
15
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
3.0
T_J = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
2.5
I_C = 60A
2.0
I_C = 30A
1.5
I_C = 15A
1.0
0.5
08 _{9 10 11 12 13 14 15 16}
V_GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.30
1.20
1.10
1.00
0
-50 -25 0 25 50 75 100 125 150 175
T_J, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
100
15V 13V
12V
80
APT30GN60K(G)
11V
60
10V
40
9V
20
8V
7V
0
0
2
4
6
8
10 12
V_CE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T_J = 125°C)
16
I_C = 30A
14 ^{TJ = 25°C}
V_CE = 120V
12
V_CE = 300V
10
8
V_CE = 480V
6
4
2
0
0 20 40 60 80 100 120 140 160 180 200
GATE CHARGE (nC)
FIGURE 4, Gate Charge
3.5
V_GE = 15V.
250µs PULSE TEST
3.0 ^{<0.5 % DUTY CYCLE}
2.5
I_C = 60A
2.0
I_C = 30A
1.5
1.0
I_C = 15A
0.5
0
0 25 50 75 100 125 150 175
T_J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
90
80
70
60
50
40
30
20
10
0
-50 -25 0 25 50 75 100 125 150 175
T_C, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature