APT30GF60JCU2 Datasheet, PDF (5/6 Pages) Microsemi Corporation – ISOTOP® Boost chopper NPT IGBT SiC chopper diode

Turn-On Delay Time vs Collector Current
50
40
V_GE = 15V
30
Tj = 125°C
20
V_CE = 400V
R_G = 6.8Ω
10
0
10 20 30 40 50 60 70
I_CE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
50
V_CE = 400V
40
R_G = 6.8Ω
30
20
V_GE=15V,
T_J=125°C
10
0
0 10 20 30 40 50 60 70
I_CE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
0.5
0.375
V_CE = 400V
R_G = 6.8Ω
T_J=125°C,
V_GE=15V
0.25
0.125
0
0 10 20 30 40 50 60 70
I_CE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
1
0.75
Eoff, 30A
0.5
0.25
0
0
Eon, 30A
V_CE = 400V
V_GE = 15V
T_J= 125°C
5
10
15
20
25
Gate Resistance (Ohms)
APT30GF60JCU2
Turn-Off Delay Time vs Collector Current
125
100
V_GE=15V,
75
T_J=25°C
V_GE=15V,
T_J=125°C
50
V_CE = 400V
R_G = 6.8Ω
25
0 10 20 30 40 50 60 70
I_CE, Collector to Emitter Current (A)
Current Fall Time vs Collector Current
50
40
30
T_J = 125°C
20
T_J = 25°C
10
V_CE = 400V, V_GE = 15V, R_G = 6.8Ω
0
0 10 20 30 40 50 60 70
I_CE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
2
V_CE = 400V
V_GE = 15V
1.5 ^{RG = 6.8Ω}
T_J = 125°C
1
0.5
0
0 10 20 30 40 50 60 70
I_CE, Collector to Emitter Current (A)
Reverse Bias Safe Operating Area
70
60
50
40
30
20
10
0
0 100 200 300 400 500 600
V_CE, Collector to Emitter Voltage (V)
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