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APT30GF60JCU2 Datasheet, PDF (2/6 Pages) Microsemi Corporation – ISOTOP® Boost chopper NPT IGBT SiC chopper diode
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APT30GF60JCU2
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
ICES Zero Gate Voltage Collector Current
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
IGES Gate – Emitter Leakage Current
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 600V
Tj = 25°C
Tj = 125°C
VGE =15V
IC = 30A
Tj = 25°C 1.7
Tj = 125°C
VGE = VCE, IC = 1mA
4
VGE = 20V, VCE = 0V
250 µA
500
2.0 2.45 V
2.2
6V
400 nA
Dynamic Characteristics
Symbol Characteristic
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Qg Total gate Charge
Qge Gate – Emitter Charge
Qgc Gate – Collector Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf Fall Time
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf Fall Time
Eon Turn-on Switching Energy
Eoff Turn-off Switching Energy
Isc Short Circuit data
Test Conditions
Min Typ Max Unit
VGE = 0V
VCE = 25V
f = 1MHz
1350
193
pF
120
VGE = 15V
VBus = 300V
IC =30A
99
10
nC
60
Inductive Switching (25°C)
30
VGE = 15V
VBus = 400V
IC = 30A
RG = 6.8Ω
12
80
ns
15
Inductive Switching (125°C)
32
VGE = 15V
VBus = 400V
IC = 30A
RG = 6.8Ω
12
ns
90
21
VGE = 15V
VBus = 400V
Tj = 125°C
0.2
IC = 30A
RG = 6.8Ω
Tj = 125°C
0.8
mJ
VGE ≤15V ; VBus = 360V
tp ≤ 10µs ; Tj = 125°C
135
A
Chopper SiC diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage
600
V
IRM Maximum Reverse Leakage Current
VR=600V
Tj = 25°C
Tj = 175°C
50 200
µA
100 2000
IF DC Forward Current
Tc = 125°C
10
A
VF Diode Forward Voltage
IF = 10A
Tj = 25°C
Tj = 175°C
1.6 1.8 V
2 2.4
QC Total Capacitive Charge
IF = 10A, VR = 300V
di/dt =500A/µs
14
nC
C Total Capacitance
f = 1MHz, VR = 200V
f = 1MHz, VR = 400V
65
pF
50
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