APT30GF60JCU2 Datasheet, PDF (3/6 Pages) Microsemi Corporation – ISOTOP® Boost chopper NPT IGBT SiC chopper diode

APT30GF60JCU2
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
R_thJC Junction to Case Thermal Resistance
IGBT
SiC chopper Diode
0.81
2.25 ^°C/W
R_thJA
V_ISOL
T_J,T_STG
T_L
Torque
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
2500
-55
20
V
150
300
°C
1.5 N.m
Wt Package Weight
29.2
g
SOT-227 (ISOTOP^®) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) ^{25.4 (1.000)}
0.85 (.033) 12.8 (.504)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
3.3 (.129)
3.6 (.143)
Cathode
1.95 (.077)
2.14 (.084)
Collector
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Emitter terminal.
Emitter
Dimensions in Millimeters and (Inches)
Typical IGBT Performance Curve
Gate
Capacitance vs Collector to Emitter Voltage
10000
Cies
1000
Coes
100
Cres
10
0
10
20
30
40
50
V_CE, Collector to Emitter Voltage (V)
Operating Frequency vs Collector Current
280
V_CE = 400V
240
D = 50%
ZCS RG = 6.8Ω
200
T_J = 125°C
160
T_C= 75°C
120
ZVS
80
hard
40
switching
0
0
10
20
30
40
50
I_C, Collector Current (A)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
0.8 _0.9
0.6 ^0.7
0.5
0.4
0.3
0.2
0.1
0 ^0.05
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
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3–6