MRF581_08 Datasheet, PDF (4/6 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF581
MRF581G
MRF581A
MRF581AG
C1, C4, C5, C6, C8, C9 — 1000 pF, Chip Capacitor
C7, C10 — 10 µF, Tantalum Capacitor
RFC — VK–200, Ferroxcube
TL1, TL7, TL8 — Microstrip 0.162, x 0.600,
TL3 — Microstrip 0.162, x 0.800,
TL5 — Microstrip 0.120, x 0.440,
TL9, TL10 — Microstrip 0.025, x 4.250,
Board Material — 0.0625, Thick Glass Teflon ε r = 2.55
C2, C3 — 1.0–10 pF, Johanson Capacitor
R1 — 1.0 kΩ Res.
FB — Ferrite Bead, Ferroxcube, 56–590–65/3B
TL2 — Microstrip 0.162, x 1.000,
TL4 — Microstrip 0.162, x 0.440,
TL6 — Microstrip 0.120, x 1.160,
Figure 1. Minimum Noise Figure and Gain @ Minimum Noise Figure.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
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