MRF581_08 Datasheet, PDF (3/6 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

FUNCTIONAL
Symbol
Test Conditions
NF
G
NF
G
U max
MSG
|S₂₁|²
Noise Figure (50ohms)
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
Power Gain @ NFmin
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
Maximum Unilateral Gain (1)
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
Maximum Stable Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
Insertion Gain
IC = 50 mAdc, VCE = 10 Vdc, f = 500 MHz
MRF581
MRF581G
MRF581A
MRF581AG
Value
Unit
Min.
Typ.
Max.
-
3.0
3.5
dB
13
15.5
dB
-
17.8
-
dB
-
20
-
dB
14
15
-
dB
Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA
f
(MHz)
100
200
300
400
500
600
700
800
900
1000
S11
|S11|
∠φ
.610
-137
.659
-161
.671
-171
.675
-178
.677
176
.678
172
.677
168
.679
184
.678
160
.682
156
S21
|S21|
∠φ
23.8
116
13.2
98
9.0
89
6.8
83
5.5
77
4.6
72
4.0
68
3.5
64
3.1
60
2.8
56
S12
|S12|
∠φ
.026
46
.033
47
.040
51
.047
55
.055
58
.064
61
.073
62
.082
63
.092
64
.102
65
S22
|S22|
.522
.351
.304
.292
.293
.299
.306
.314
.322
.311
∠φ
-78
-106
-120
-128
-132
-134
-135
-136
-138
-139
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