MRF581_08 Datasheet, PDF (1/6 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
MRF581
MRF581G
MRF581A
MRF581AG
*G Denotes RoHS Compliant, Pb free Terminal Finish
Features
• Low Noise - 2.5 dB @ 500 MHZ
• Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz
• Ftau - 5.0 GHz @ 10v, 75mA
• Cost Effective MacroX Package
Macro X
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
V_CEO
Collector-Emitter Voltage
V_CBO
Collector-Base Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
MRF581 MRF581A
Unit
18
15
Vdc
30
Vdc
2.5
Vdc
200
mA
Thermal Data
P
D
P
D
Tstg
Total Device Dissipation @ TC = 50ºC
Derate above 50ºC
Total Device Dissipation @ TC = 25ºC
Derate above 25ºC
Storage Junction Temperature Range
T_Jmax
Maximum Junction Temperature
Revision A- December 2008
2.5
25
1.25
10
-65 to +150
150
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Visit our website at www.microsemi.com or contact our factory direct.
Watts
mW/ ºC
Watts
mW/ ºC
ºC
ºC