JAN2N6802 Datasheet, PDF (4/9 Pages) Microsemi Corporation – N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557

2N6796, 2N6798, 2N6800, 2N6802
ELECTRICAL CHARACTERISTICS @ T_A = +25 °C, unless otherwise noted (continued)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
V_GS = 10 V, I_D = 8.0 A, V_DS = 50 V
V_GS = 10 V, I_D = 5.5 A, V_DS = 50 V
V_GS = 10 V, I_D = 3.0 A, V_DS = 50 V
V_GS = 10 V, I_D = 2.5 A, V_DS = 50 V
Gate to Source Charge
V_GS = 10 V, I_D = 8.0 A, V_DS = 50 V
V_GS = 10 V, I_D = 5.5 A, V_DS = 50 V
V_GS = 10 V, I_D = 3.0 A, V_DS = 50 V
V_GS = 10 V, I_D = 2.5 A, V_DS = 50 V
Gate to Drain Charge
V_GS = 10 V, I_D = 8.0 A, V_DS = 50 V
V_GS = 10 V, I_D = 5.5 A, V_DS = 50 V
V_GS = 10 V, I_D = 3.0 A, V_DS = 50 V
V_GS = 10 V, I_D = 2.5 A, V_DS = 50 V
Symbol Min. Max. Unit
2N6796
2N6798
2N6800
2N6802
Q _g(on)
2N6796
2N6798
2N6800
Q _gs
2N6802
2N6796
2N6798
2N6800
Q _gd
2N6802
28.51
42.07
34.75
nC
33.00
6.34
5.29
5.75
nC
4.46
16.59
28.11
16.59
nC
28.11
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-on delay time
I_D = 8.0 A, V_GS = +10 V, R_G = 7.5 Ω, V_DD = 30 V
I_D = 5.5 A, V_GS = +10 V, R_G = 7.5 Ω, V_DD = 77 V
I_D = 3.0 A, V_GS = +10 V, R_G = 7.5 Ω, V_DD = 176 V
I_D = 2.5 A, V_GS = +10 V, R_G = 7.5 Ω, V_DD = 225 V
Rinse time
I_D = 8.0 A, V_GS = +10 V, R_G = 7.5 Ω, V_DD = 30 V
I_D = 5.5 A, V_GS = +10 V, R_G = 7.5 Ω, V_DD = 77 V
I_D = 3.0 A, V_GS = +10 V, R_G = 7.5 Ω, V_DD = 176 V
I_D = 2.5 A, V_GS = +10 V, R_G = 7.5 Ω, V_DD = 225 V
Turn-off delay time
I_D = 8.0 A, V_GS = +10 V, R_G = 7.5 Ω, V_DD = 30 V
I_D = 5.5 A, V_GS = +10 V, R_G = 7.5 Ω, V_DD = 77 V
I_D = 3.0 A, V_GS = +10 V, R_G = 7.5 Ω, V_DD = 176 V
I_D = 2.5 A, V_GS = +10 V, R_G = 7.5 Ω, V_DD = 225 V
Fall time
I_D = 8.0 A, V_GS = +10 V, R_G = 7.5 Ω, V_DD = 30 V
I_D = 5.5 A, V_GS = +10 V, R_G = 7.5 Ω, V_DD = 77 V
I_D = 3.0 A, V_GS = +10 V, R_G = 7.5 Ω, V_DD = 176 V
I_D = 2.5 A, V_GS = +10 V, R_G = 7.5 Ω, V_DD = 225 V
Diode Reverse Recovery Time
di/dt ≤ 100 A/µs, V_DD ≤ 50 V, I_F = 8.0 A
di/dt ≤ 100 A/µs, V_DD ≤ 50 V, I_F = 5.5 A
di/dt ≤ 100 A/µs, V_DD ≤ 50 V, I_F = 3.0 A
di/dt ≤ 100 A/µs, V_DD ≤ 50 V, I_F = 2.5 A
Symbol
2N6796
2N6798
2N6800
t _d(on)
2N6802
2N6796
2N6798
2N6800
t_r
2N6802
2N6796
2N6798
2N6800
2N6802
t _d(off)
2N6796
2N6798
2N6800
t_f
2N6802
2N6796
2N6798
2N6800
t _rr
2N6802
Min.
Max. Unit
30
ns
75
50
35
ns
30
40
50
55
ns
55
45
40
35
ns
30
300
500
700
ns
900
T4-LDS-0047, Rev. 3 (121483)
©2012 Microsemi Corporation
Page 4 of 9