JAN2N6802 Datasheet, PDF (2/9 Pages) Microsemi Corporation – N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557

2N6796, 2N6798, 2N6800, 2N6802
Notes: 1. Derate linearly 0.2 W/°C for TC > +25 °C.
2. The following formula derives the maximum theoretical ID limit. ID is also limited by package and internal wires and may be limited due to
pin diameter.
3. IDM = 4 x ID1 as calculated in note 2.
MECHANICAL and PACKAGING
• CASE: Hermetically sealed, kovar base, nickel cap.
• TERMINALS: Tin/lead solder dip nickel plate or RoHS compliant pure tin plate (commercial grade only).
• MARKING: Part number, date code, manufacturer’s ID.
• WEIGHT: Approximately 1.064 grams.
• See Package Dimensions on last page.
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS level (2N6798)
Blank = Commercial
JEDEC type number
(see Electrical Characteristics
table)
PART NOMENCLATURE
JAN 2N6796 (e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Symbol
di/dt
I_F
R_G
V _DD
V _DS
V _GS
SYMBOLS & DEFINITIONS
Definition
Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.
Forward current
Gate drive impedance
Drain supply voltage
Drain source voltage, dc
Gate source voltage, dc
T4-LDS-0047, Rev. 3 (121483)
©2012 Microsemi Corporation
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