JAN2N6802 Datasheet, PDF (3/9 Pages) Microsemi Corporation – N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557

2N6796, 2N6798, 2N6800, 2N6802
ELECTRICAL CHARACTERISTICS @ T_A = +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
V_GS = 0 V, I_D = 1.0 mA
Gate-Source Voltage (Threshold)
V_DS ≥ V_GS, I_D = 0.25 mA
V_DS ≥ V_GS, I_D = 0.25 mA, T_J = +125°C
V_DS ≥ V_GS, I_D = 0.25 mA, T_J = -55°C
Gate Current
V_GS = ± 20 V, V_DS = 0 V
V_GS = ± 20 V, V_DS = 0 V, T_J = +125°C
Drain Current
V_GS = 0 V, V_DS = 80 V
V_GS = 0 V, V_DS = 160 V
V_GS = 0 V, V_DS = 320 V
V_GS = 0 V, V_DS = 400 V
Drain Current
V_GS = 0 V, V_DS = 80 V, T_J = +125 °C
V_GS = 0 V, V_DS = 160 V, T_J = +125 °C
V_GS = 0 V, V_DS = 320 V, T_J = +125 °C
V_GS = 0 V, V_DS = 400 V, T_J = +125 °C
Static Drain-Source On-State Resistance
V_GS = 10 V, I_D = 5.0 A pulsed
V_GS = 10 V, I_D = 3.5 A pulsed
V_GS = 10 V, I_D = 2.0 A pulsed
V_GS = 10 V, I_D = 1.5 A pulsed
Static Drain-Source On-State Resistance
V_GS = 10 V, I_D = 8.0 A pulsed
V_GS = 10 V, I_D = 5.5 A pulsed
V_GS = 10 V, I_D = 3.0 A pulsed
V_GS = 10 V, I_D = 2.5 A pulsed
Static Drain-Source On-State Resistance
T_J = +125°C
V_GS = 10 V, I_D = 5.0 A pulsed
V_GS = 10 V, I_D = 3.5 A pulsed
V_GS = 10 V, I_D = 2.0 A pulsed
V_GS = 10 V, I_D = 1.5 A pulsed
Diode Forward Voltage
V_GS = 0 V, I_D = 8.0 A pulsed
V_GS = 0 V, I_D = 5.5 A pulsed
V_GS = 0 V, I_D = 3.0 A pulsed
V_GS = 0 V, I_D = 2.5 A pulsed
Symbol Min. Max.
2N6796
100
2N6798
2N6800
V _(BR)DSS
200
400
2N6802
500
V _GS(th)1
2.0
4.0
V _GS(th)2
1.0
V _GS(th)3
5.0
I _GSS1
I _GSS2
±100
±200
2N6796
2N6798
2N6800
I _DSS1
25
2N6802
2N6796
2N6798
2N6800
2N6802
I _DSS2
0.25
2N6796
2N6798
2N6800
2N6802
r _DS(on)1
0.18
0.40
1.00
1.50
2N6796
2N6798
2N6800
2N6802
r _DS(on)2
0.195
0.420
1.100
1.600
2N6796
2N6798
2N6800
2N6802
r _DS(on)3
2N6796
2N6798
2N6800
V _SD
2N6802
0.35
0.75
2.40
3.50
1.5
1.4
1.4
1.4
Unit
V
V
nA
µA
mA
Ω
Ω
Ω
V
T4-LDS-0047, Rev. 3 (121483)
©2012 Microsemi Corporation
Page 3 of 9