JAN2N1613 Datasheet, PDF (4/4 Pages) Microsemi Corporation – NPN LOW POWER SILICON TRANSISTOR

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: [phone] Fax: [phone]
Symbol
CH
LC
LD
LL
LU
L1
L2
HD
CD
P
Q
r
TL
TW
α
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.240
.260
6.10
6.60
.200 TP
5.08 TP
.016
.021
0.41
0.53
See notes 12 and 13
.016
.019
0.41
0.48
.050
1.27
.250
6.35
.335
.370
8.51
9.40
.305
.335
7.75
8.51
.100
2.54
.050
1.27
.010
0.25
.029
.045
.028
.034
45° TP
0.74
1.14
0.71
0.86
45° TP
Notes
7
8, 9
8, 9
8, 9
8, 9
6
5
4
7
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of 0.011 inch (0.28 mm).
4. TL measured from maximum HD.
5. Outline in this zone is not controlled.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.000 mm) below seating plane shall be within .007 inch (0.18
mm) radius of true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may
be measured by direct methods or by the gauging procedure.
8. LU applies between L1 and L2. LU applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond
LL minimum.
9. All three leads.
10. The collector shall be electrically and mechanically connected to the case.
11. r (radius) applies to both inside corners of tab.
12. For transistor types 2N1613, dimension LL is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm) maximum.
13. For transistor types 2N1613L, dimension LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm)
maximum.
14. Lead number 1 - emitter; lead number 2 - base; lead number 3 - collector.
FIGURE 2. Physical dimensions 2N1613 and 2N1613L (similar to TO-5 and TO-39).
T4-LDS-0200 Rev. 1 (110597)
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