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| JAN2N1613 Datasheet, PDF (2/4 Pages) Microsemi Corporation – NPN LOW POWER SILICON TRANSISTOR | |||
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1mAdc, VCE = 10Vdc
IC = 10mAdc, VCE = 10Vdc
IC = 150mAdc, VCE = 10Vdc
IC = 500mAdc, VCE = 10Vdc
Collector-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc
Symbol
hFE
VCE(sat)
Base-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc
VBE(sat)
Min.
20
35
40
20
Max.
Unit
120
1.5
Vdc
1.3
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Small-Signal Forward Current Transfer Ratio
IC = 50mAdc, VCE = 10Vdc, f = 20MHz
Small-Signal Forward Current Transfer Ratio
IC = 1.0mAdc, VCE = 5Vdc, f = 1.0kHz
IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz
Small-Signal Short Circuit Input Impedance
IC = 5.0mAdc, VCB = 10Vdc, f = 1.0kHz
Small-Signal Short Circuit Output Admittance
IC = 5.0mAdc, VCB = 10Vdc, f = 1.0kHz
Output Capacitance
VCB = 10Vdc, IE = 0, 100 kHz ⤠f ⤠1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time & Turn-Off Time
(See Figure 5 of MIL-PRF-19500/181)
Symbol
|hfe|
hfe
hib
hob
Cobo
Min.
3.0
30
35
4.0
Max.
Unit
100
150
8.0
â¦
1.0
ηâ¦
25
pF
Symbol
ton + toff
Min.
Max.
Unit
30
ηs
(3) Pulse Test: Pulse Width = 300μs, Duty Cycle ⤠2.0%
T4-LDS-0200 Rev. 1 (110597)
Page 2 of 4
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