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JAN2N1613 Datasheet, PDF (1/4 Pages) Microsemi Corporation – NPN LOW POWER SILICON TRANSISTOR
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/181
DEVICES
2N718A
2N1613
2N1613L
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +25°C
2N718A
2N1613, L
Total Power Dissipation
@ TC = +25°C
2N718A
2N1613, L
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case 2N718A
2N1613, L
VCEO
VCBO
VEBO
IC
PT
PT
TJ, Tstg
RθJC
30
75
7.0
500
0.5
0.8
1.8
3.0
-65 to +200
97
58
Unit
Vdc
Vdc
Vdc
mAdc
W
W
°C
°C/W
TO-18 (TO-206AA)
2N718A
(1) Derate linearly at 4.57 mW/°C for 2N1613, L and 2.85mW/°C for 2N718A for TA > +25°C
(2) Derate linearly at 17.2 mW/°C for 2N1613, L and 10.3mW/°C for 2N718A for TC > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min. Max.
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 100µAdc
Collector-Emitter Breakdown Voltage
IC = 100µAdc, RBE = 10Ω
Collector-Base Cutoff Current
VCB = 60Vdc
VCB = 75Vdc
Emitter-Base Cutoff Current
VEB = 5.0Vdc
VEB = 7.0Vdc
V(BR)CEO
30
V(BR)CER
50
ICBO
10
10
IEBO
10
10
Unit
Vdc
Vdc
ηAdc
µAdc
ηA dc
µAdc
TO-39 (TO-205AD)
2N1613
TO-5
2N1613L
T4-LDS-0200 Rev. 1 (110597)
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