ARF466A Datasheet, PDF (4/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

Bias
0-12V
RF
Input _C2
R1
R2 ^R3
C6
L1
TL1
C3 _C1
L4
+
C7
C8
- ^150V
L3
RF
C9
Output
L2
DUT
C5
C4
ARF466A_B
40.68 MHz Test Circuit
C1 -- 2200 pF ATC 700B
C2-C5 -- Arco 465 Mica trimmer
C6-C8 -- .1μF 500V ceramic chip
C9 -- 3x 2200 pF 500V chips COG
L1 -- 4t #22 AWG .25"ID .25 "L ~87nH
L2 -- 5t #16 AWG .312" ID .35"L ~176nH
L3 -- 10t #24 AWG .25"ID ~.5μH
L4 -- VK200-4B ferrite choke 3μH
R1- R3 -- 1k W 0.5Ω Carbon
TL1 -- 38Ω t-line .175 x 1 in long
C1 .45" from gate pin.
DUT = ARF466A/B
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
TO-264 (L) Package Outline
19.51 (.768)
20.50 (.807)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
3.10 (.122)
3.48 (.137)
Dimensions in Millimeters and (Inches)
NOTE: These two parts comprise a symmetric pair of RF
power transistors and meet the same electrical
specifications. The device pin-outs are the mirror image
of each other to allow ease of use as a push-pull pair.
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
Device
ARF - A ARF - B
Gate
Source
Drain
Drain
Source
Gate
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.