ARF466A Datasheet, PDF (1/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE POWER MOSFETs

RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
ARF466A
ARF466B
TO-264
Common
Source
200V 300W 45MHz
The ARF466A and ARF466B comprise a symmetric pair of common source RF power transistors designed for push-
pull scientific, commercial, medical and industrial RF power amplifier applications up to 45 MHz. They have been
optimized for both linear and high efficiency classes of operation.
• Specified 150 Volt, 40.68 MHz Characteristics: ^{• Low Cost Common Source RF Package.}
•
Output Power = 300 Watts.
• Low Vth thermal coefficient.
•
Gain = 16dB (Class AB)
• Low Thermal Resistance.
•
Efficiency = 75% (Class C)
• Optimized SOA for Superior Ruggedness.
MAXIMUM RATINGS
Symbol Parameter
V_DSS
V_DGO
I_D
V_GS
P_D
R_θJC
T_J,T_STG
T_L
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T_C = 25°C
Gate-Source Voltage
Total Power Dissipation @ T_C = 25°C
Junction to Case
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
All Ratings: T_C = 25°C unless otherwise specified.
ARF466A_B
UNIT
1000
1000
Volts
13
Amps
±30
Volts
357
Watts
0.35
°C/W
-55 to 150
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
BV_DSS
R_DS(ON)
I_DSS
I_GSS
g_fs
V_GS(TH)
Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 250 μA)
Drain-Source On-State Resistance ¹ (V_GS = 10V^, I_D = 6.5A⁾
Zero Gate Voltage Drain Current (V_DS = 1000V, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 800V, V_GS = 0V, T_C = 125°C)
Gate-Source Leakage Current (V_GS = ±30V, V_DS = 0V)
Forward Transconductance (V_DS = 25V, I_D = 6.5A)
Gate Threshold Voltage (V_DS = V_GS, I_D = 1mA)
MIN TYP MAX UNIT
1000
Volts
1.0 ^ohms
25
μA
250
±100 nA
3.3
7
9
mhos
2
4
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com