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ARF466A Datasheet, PDF (2/4 Pages) Advanced Power Technology – N-CHANNEL ENHANCEMENT MODE POWER MOSFETs
DYNAMIC CHARACTERISTICS
Symbol Characteristic
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
VGS = 0V
VDS = 150V
f = 1 MHz
VGS = 15V
VDD = 500 V
ID = 13A @ 25°C
RG = 1.6W
ARF466A_B
MIN TYP MAX UNIT
2000
165
pF
75
12
10
ns
43
10
FUNCTIONAL CHARACTERISTICS
Symbol Characteristic
GPS Common Source Amplifier Power Gain
η
Drain Efficiency
Ψ
Electrical Ruggedness VSWR 10:1
Test Conditions
MIN TYP MAX UNIT
f = 40.68 MHz
VGS = 2.5V VDD = 150V
Pout = 300W
14
16
dB
70
75
%
No Degradation in Output Power
1 Pulse Test: Pulse width < 380μS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
30
Class C
25
VDD = 150V
Pout = 150W
20
15
10
5
0
30 45 60 75 90 105 120
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
20
VDS> ID (ON) x RDS (ON)MAX.
18
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
16
14
TJ = -55°C
12
10
8
6
4
TJ = -55°C
2
TJ = +25°C
0
TJ = +125°C
01 2 3 4 5 6 7 8
VFGiSg,uGreAT3,ET-TyOpi-cSaOl UTrRaCnsEfeVrOCLhTAarGaEct(eVriOsLtiTcSs)
10,000
Ciss
1000
500
Coss
100
Crss
50
10
.1
1
10
100 200
Figure V2,DTSy, pDiRcaAlINC-aTpOa-cSitOaUncReCvEsV. DOrLaTiAnG-toE-S(VoOuLrcTeS)Voltage
52
OPERATION HERE
LIMITED BY RDS (ON)
10
5
100uS
1mS
1
.5
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
1
10
100
1000
FigVuDrSe,
DRAIN-TO-SOURCE
4, Typical Maximum
VOLTAGE (VOLTS)
Safe Operating Area
10mS
100mS