APTC60DHM35T3G Datasheet, PDF (4/7 Pages) Microsemi Corporation – Asymmetrical bridge Super Junction MOSFET Power Module

APTC60DHM35T3G
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3
0.9
0.25
0.7
0.2
0.5
0.15
0.3
0.1
0.1
0.05
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
400
360
320
V_GS=15&10V
280
240
6.5V
6V
200
5.5V
160
120
5V
80
4.5V
40
4V
0
0
5
10 15 20 25
V_DS, Drain to Source Voltage (V)
1.1
1.05
R_DS(on) vs Drain Current
Normalized to
V_GS=10V @ 36A
V_GS=10V
1
V_GS=20V
0.95
0.9
0
20 40 60 80 100 120
I_D, Drain Current (A)
Transfert Characteristics
280
V_DS > I_D(on)xR_DS(on)MAX
240 _{250µs pulse test @ < 0.5 duty cycle}
200
160
120
80
T_J=125°C
40
T_J=25°C
T_J=-55°C
0
01234567
V_GS, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
80
70
60
50
40
30
20
10
0
25 50 75 100 125 150
T_C, Case Temperature (°C)
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