APTC60DHM35T3G Datasheet, PDF (1/7 Pages) Microsemi Corporation – Asymmetrical bridge Super Junction MOSFET Power Module

APTC60DHM35T3G
Asymmetrical bridge
Super Junction MOSFET
Power Module
V_DSS = 600V
R_DSon = 35mΩ max @ Tj = 25°C
I_D = 72A @ Tc = 25°C
13 14
Q1
18
CR3
22
7
19
23
8
Q4
CR2
4
29
30
15
31
R1
3
32
16
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Features
•
- Ultra low R_DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
600
V
T_c = 25°C
72
T_c = 80°C
54
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
200
±20
V
35
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
416
W
I_AR Avalanche current (repetitive and non repetitive)
20
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
1
mJ
1800
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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