APTC60DHM35T3G Datasheet, PDF (3/7 Pages) Microsemi Corporation – Asymmetrical bridge Super Junction MOSFET Power Module

APTC60DHM35T3G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
R_thJC Junction to Case Thermal Resistance
CoolMOS
diode
0.30 _°C/W
0.85
V_ISOL
T_J
T_STG
T_C
Torque
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
M4
4000
-40
-40
-40
2.5
V
150
125 °C
100
4.7 N.m
Wt Package Weight
110 g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Min Typ
R₂₅
∆R₂₅/R₂₅
B_25/85
∆B/B
Resistance @ 25°C
T₂₅ = 298.15 K
R_T
=
R₂₅
exp
⎡
⎢⎢⎣^B25
/
85
⎜⎜⎝⎛
1
T₂₅
−
1
T
⎟⎟⎠⎞⎥⎥⎦⎤
T_C=100°C
T: Thermistor temperature
R_T: Thermistor value at T
50
5
3952
4
SP3 Package outline (dimensions in mm)
Max
Unit
kΩ
%
K
%
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
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