APT4F120K Datasheet, PDF (4/4 Pages) Microsemi Corporation – N-Channel FREDFET 1200V, 4A, 4.60Ω Max,

20
10
I_DM
20
10
I_DM
Rds(on)
APT4F120K
13µs
13µs
1
100µs
Rds(on)
1ms
10ms
T_J = 125°C
T_C = 75°C
0.1
1
10
100ms
DC line
100
1200
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
T_J (°C)
Dissipated Power
(Watts)
0.239
0.0025
1
T_J = 150°C
T_C = 25°C
100µs
1ms
10ms
100ms
DC line
Scaling for Different Case & Junction
Temperatures:
0.1
1
I_D = I_{D(TC = 25°C)}*(T_J - T_C)/125
10
100
1200
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
T_C (°C)
0.323
0.124
Z_EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Figure 11, Transient Thermal Impedance Model
0.60
D = 0.9
0.50
0.40
0.7
0.30
0.20
0.10
0
10^-5
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
t₁ = Pulse Duration
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-4
10^-3
10^-2
10 ^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
TO-220 (K) Package Outline
1.39 (.055)
0.51 (.020)
e3 100% Sn Plated
Drain
12.192 (.480)
9.912 (.390)
3.42 (.135)
2.54 (.100)
4.08 (.161) Dia.
3.54 (.139)
10.66 (.420)
9.66 (.380)
5.33 (.210)
4.83 (.190)
6.85 (.270)
5.85 (.230)
3.683 (.145)
MAX.
0.50 (.020)
0.41 (.016)
14.73 (.580)
12.70 (.500)
2.92 (.115)
2.04 (.080)
4.82 (.190)
3.56 (.140)
Dimensions in Millimeters and (Inches)
1.01 (.040) 3-Plcs.
0.83 (.033)
2.79 (.110)
2.29 (.090)
5.33 (.210)
4.83 (.190)
Gate
Drain
Source
1.77 (.070) 3-Plcs.
1.15 (.045)
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