APT4F120K Datasheet, PDF (2/4 Pages) Microsemi Corporation – N-Channel FREDFET 1200V, 4A, 4.60Ω Max,

Static Characteristics
Symbol Parameter
T_J = 25°C unless otherwise specified
APT4F120K
Test Conditions
Min Typ Max Unit
V_BR(DSS)
∆V_BR(DSS)/∆T_J
R_DS(on)
V_GS(th)
∆V_GS(th)/∆T_J
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance ³
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
I_DSS
Zero Gate Voltage Drain Current
I_GSS
Gate-Source Leakage Current
V_GS = 0V, I_D = 250μA
Reference to 25°C, I_D = 250μA
V_GS = 10V, I_D = 2A
V_GS = V_DS, I_D = 1mA
1200
3
V_DS = 1200V ^T_J ^{= 25°C}
V_GS = 0V _{TJ = 125°C}
V_GS = ±30V
1.41
3.82
4
-10
4.60
5
250
1000
±100
V
V/°C
Ω
V
mV/°C
μA
nA
Dynamic Characteristics
T_J = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min
g_fs
C_iss
C_rss
C_oss
C⁴
o(cr)
C5
o(er)
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
V_DS = 50V, I_D = 2A
V_GS = 0V, V_DS = 25V
f = 1MHz
V_GS = 0V, V_DS = 0V to 800V
V_GS = 0 to 10V, I_D = 2A,
V_DS = 600V
Resistive Switching
V_DD = 800V, I_D = 2A
R_G = 10Ω ⁶ , V_GG = 15V
Typ
4.5
1385
17
100
40
20
43
7
20
7.4
4.4
24
6.9
Max
Unit
S
pF
nC
ns
Source-Drain Diode Characteristics
Symbol
I_S
I_SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ¹
Test Conditions
Min Typ Max Unit
MOSFET symbol
showing the integral
reverse p-n junction
diode (body diode)
D
G
S
4
A
15
V_SD
Diode Forward Voltage
I_SD = 2A, T_J = 25°C, V_GS = 0V
0.8 1.3
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
I_rrm
Reverse Recovery Current
I_SD = 2A ³ ,
di_SD/dt = 100A/μs,
V_DD = 100V
T_J = 25°C
T_J = 125°C
T_J = 25°C
T_J = 125°C
T_J = 25°C
T_J = 125°C
170 195
330 400
.370
.820
4.90
5.40
dv/dt
Peak Recovery dv/dt
I_SD ≤ 2A, di/dt≤1000Aμs, V_DD = 800V,
20
T_J = 125°C
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at T_J = 25°C, L = 155.0mH, R_G = 25Ω, I_AS = 2A.
3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
4 C_o(cr) is defined as a fixed capacitance with the same stored charge as C_OSS with V_DS = 67% of V_(BR)DSS.
5 C_o(er) is defined as a fixed capacitance with the same stored energy as C_OSS with V_DS = 67% of V_(BR)DSS. To calculate C_o(er) for any value of
V_DS less than V_(BR)DSS, use this equation: C_o(er) = -8.32E-8/V_DS^2 + 3.49E-8/V_DS + 1.30E-10.
6 R_G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
V
nS
μC
A
V/ns
Microsemi reserves the right to change, without notice, the specifications and information contained herein.