APT4F120K Datasheet, PDF (1/4 Pages) Microsemi Corporation – N-Channel FREDFET 1200V, 4A, 4.60Ω Max,

APT4F120K
1200V, 4A, 4.60Ω Max,
N-Channel FREDFET
Power MOS 8^™ is a high speed, high voltage N-channel switch-mode power MOSFET.
This 'FREDFET' version has a drain-source (body) diode that has been optimized for
TO-220
high reliability in ZVS phase shifted bridge and other circuits through reduced t_rr, soft
recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly
reduced ratio of C_rss/C_iss result in excellent noise immunity and low switching loss. The
intrinsic gate resistance and capacitance of the poly-silicon gate structure help control
D
di/dt during switching, resulting in low EMI and reliable paralleling, even when switching
APT4F120K
at very high frequency.
Single die FREDFET G
S
FEATURES
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
Absolute Maximum Ratings
Symbol Parameter
I_D
Continuous Drain Current @ T_C = 25°C
Continuous Drain Current @ T_C = 100°C
I_DM
Pulsed Drain Current ¹
V_GS Gate - Source Voltage
E_AS
Single Pulse Avalanche Energy ²
I_AR
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
P_D
R_θJC
R_θCS
T_J, T_STG
T_L
Total Power Dissipation @ T_C = 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
W_T
Package Weight
Torque Mounting Torque (TO-220 Package), 4-40 or M3 screw
Ratings
Unit
4
2.7
A
15
±30
V
310
mJ
2
A
Min Typ Max Unit
-
-
225
W
-
-
.56
°C/W
-
.11
-
-55
-
150
°C
-
-
300
-
0.07
-
oz
-
2
-
g
-
-
10 ^in·lbf
-
-
1.1 ^N·m
Microsemi Website - http://www.microsemi.com