APT48M80B2 Datasheet, PDF (4/4 Pages) Microsemi Corporation – N-Channel MOSFET

200
100
I_DM
200
100
I_DM
APT48M80B2_L
10
13μs
Rds(on)
100μs
1
1ms
10ms
T_J = 125°C
T_C = 75°C
0.1
1
10
100ms
DC line
100
800
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area
10
13μs
Rds(on) 100μs
1
T_J = 150°C
T_C = 25°C
1ms
10ms
Scaling for Different Case & Junction
Temperatures:
100ms
0.1
1
I_D = I_{D(TC = 25°C)}*(T_J - T_C)/125
10
100
DC line
800
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Maximum Forward Safe Operating Area
0.12
0. 1
0.08
D = 0.9
0.7
0.06
0.04
0.02
0
10^-5
0.5
0.3
0.1
0.05
SINGLE PULSE
Note:
t1
t2
t₁ = Pulse Duration
Duty Factor D = ^t1/t2
Peak T_J = P_DM x Z_θJC + TC
10^-4
10^-3
10^-2
10 ^-1
1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
T-MAX^® (B2) Package Outline
TO-264 (L) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
20.80 (.819)
21.46 (.845)
e3 100% Sn Plated
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
5.79 (.228)
6.20 (.244)
25.48 (1.003)
26.49 (1.043)
3.10 (.122)
3.48 (.137)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
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