APT48M80B2 Datasheet, PDF (2/4 Pages) Microsemi Corporation – N-Channel MOSFET

Static Characteristics
T_J = 25°C unless otherwise specified
Symbol Parameter
Test Conditions
Min
V_BR(DSS)
∆V_BR(DSS)/∆T_J
R_DS(on)
V_GS(th)
∆V_GS(th)/∆T_J
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance ³
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefficient
V_GS = 0V, I_D = 250μA
800
Reference to 25°C, I_D = 250μA
V_GS = 10V, I_D = 24A
3
V_GS = V_DS, I_D = 2.5mA
I_DSS
Zero Gate Voltage Drain Current
I_GSS
Gate-Source Leakage Current
V_DS = 800V
V_GS = 0V
T_J = 25°C
T_J = 125°C
V_GS = ±30V
APT48M80B2_L
Typ Max Unit
V
0.87
V/°C
0.17 0.19
Ω
4
5
V
-10
mV/°C
100
μA
500
±100 ^nA
Dynamic Characteristics
Symbol Parameter
T_J = 25°C unless otherwise specified
Test Conditions
Min
g_fs
Forward Transconductance
C_iss
Input Capacitance
C_rss
Reverse Transfer Capacitance
C_oss
Output Capacitance
V_DS = 50V, I_D = 24A
V_GS = 0V, V_DS = 25V
f = 1MHz
C4
o(cr)
C5
o(er)
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
V_GS = 0V, V_DS = 0V to 533V
V_GS = 0 to 10V, I_D = 24A,
V_DS = 400V
Resistive Switching
V_DD = 400V, I_D = 24A
R_G = 2.2Ω ⁶ , V_GG = 15V
Typ
43
9330
160
930
440
220
305
51
155
55
75
230
70
Max
Unit
S
pF
nC
ns
Source-Drain Diode Characteristics
Symbol Parameter
Test Conditions
Min Typ Max
I_S
Continuous Source Current (Body Diode) ^{MOSFET symbol}
showing the integral
D
49
I_SM
Pulsed Source Current (Body Diode) ¹
reverse p-n junction
G
173
diode (body diode)
S
V_SD
Diode Forward Voltage
I_SD = 24A, T_J = 25°C, V_GS = 0V
0.8 1.0
t_rr
Q_rr
dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Peak Recovery dv/dt
I_SD = 24A ³
di_SD/dt = 100A/μs, T_J = 25°C
I_SD ≤ 24A, di/dt ≤1000A/μs,
V_DD = 533V, T_J = 125°C
970
22
10
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at T_J = 25°C, L = 6.9mH, R_G = 25Ω, I_AS = 24A.
3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
4 C_o(cr) is defined as a fixed capacitance with the same stored charge as C_OSS with V_DS = 67% of V_(BR)DSS.
5 C_o(er) is defined as a fixed capacitance with the same stored energy as C_OSS with V_DS = 67% of V_(BR)DSS. To calculate C_o(er) for any value of
V_DS less than V_(BR)DSS, use this equation: C_o(er) = -8.32E-8/V_DS^2 + 3.49E-8/V_DS + 1.30E-10.
6 R_G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Unit
A
V
nS
μC
V/ns