APT48M80B2 Datasheet, PDF (3/4 Pages) Microsemi Corporation – N-Channel MOSFET

100
V_GS = 10V
80
60
T_J = -55°C
T_J = 25°C
40
T_J = 125°C
20
T_J = 150°C
0
0
5 10 15 20 25 30
V_DS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
3.0 _{NORMALIZED TO}
V_GS = 10V @ 24A
2.5
2.0
1.5
1.0
0.5
0-55 _{-25 0 25 50 75 100 125 150}
T_J, JUNCTION TEMPERATURE (°C)
Figure 3, R_DS(ON) vs Junction Temperature
80
70
T_J = -55°C
60
T_J = 25°C
50
T_J = 125°C
40
30
20
10
00
10
20
30
40
50
I_D, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
I_D = 24A
14
12
V_DS = 160V
10
V_DS = 400V
8
6
V_DS = 640V
4
2
0
0 50 100 150 200 250 300 350 400
Q_g, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
50
T_J = 125°C
40
V_GS= 10&15V
APT48M80B2_L
6V
5.5V
30
5V
20
10
4.5V
4V
0
0
5 10 15 20 25 30
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
160
140
V_DS> I_D(ON) x R_DS(ON) MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
120
100
T_J = -55°C
80
60
T_J = 25°C
T_J = 125°C
40
20
0
0
20,000
10,000
12345678
V_GS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
C_iss
1000
C_oss
100
C_rss
10
0 100 200 300 400 500 600
V_DS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
160
140
120
100
T_J = 25°C
80
60
T_J = 150°C
40
20
0
0
0.3
0.6
0.9
1.2
1.5
V_SD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage