English
Language : 

APT43GA90BD30 Datasheet, PDF (4/9 Pages) Microsemi Corporation – High Speed PT IGBT
◁
Typical Performance Curves
16
14
VGE = 15V
12
10
8
VCE = 600V
6 TJ = 25°C, or 125°C
RG = 4.7Ω
L = 100μH
4
0
10
20
30
40
50
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
50
RG = 4.7Ω, L = 100μH, VCE = 600V
45
40
35
30
25
20
15
10
TJ = 25 or 125°C,VGE = 15V
5
0
0
10
20
30
40
50
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
3000
2500
VCE = 600V
VGE = +15V
RG = 4.7Ω
2000
1500
TJ = 125°C
1000
500
TJ = 25°C
0
0
10
20
30
40
50
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
5000
4000
VCE = 600V
VGE = +15V
TJ = 125°C
Eon2,50A
3000
Eon2,50A
2000
Eoff,25A
1000
Eon2,25A
Eoff,12.5A
Eon2,12.5A
0
0
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
APT43GA90BD30
200
150
100
VGE =15V,TJ=125°C
50
VGE =15V,TJ=25°C
VCE = 600V
RG = 4.7Ω
L = 100μH
0
0
10
20
30
40 50
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
160
RG = 4.7Ω, L = 100μH, VCE = 600V
140
120
TJ = 125°C, VGE = 15V
100
80
60
40
TJ = 25°C, VGE = 15V
20
0
0
10
20
30
40
50
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
2400
2000
VCE = 600V
VGE = +15V
RG = 4.7Ω
1600
1200
TJ = 125°C
800
400
TJ = 25°C
0
0
10
20
30
40
50
ICE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
3000
2500
VCE = 600V
VGE = +15V
RG = 4.7Ω
Eon2,50A
2000
Eon2,50A
1500
1000
Eoff,25A
500
Eoff,25A
Eon2,12.5A
Eoff,12.5A
0
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
 ▷