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| APT43GA90BD30 Datasheet, PDF (1/9 Pages) Microsemi Corporation – High Speed PT IGBT | |||
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APT43GA90BD30
900V
High Speed PT IGBT
POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved
through leading technology silicon design and lifetime control processes. A reduced Eoff -
VCE(ON) tradeoff results in superior efï¬ciency compared to other IGBT technologies. Low
gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short
delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the
poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even
when switching at high frequency.
TO-247
APT43GA90B
G
C
E
Combi (IGBT and Diode)
FEATURES
⢠Fast switching with low EMI
⢠Very Low Eoff for maximum efï¬ciency
⢠Ultra low Cres for improved noise immunity
⢠Low conduction loss
⢠Low gate charge
⢠Increased intrinsic gate resistance for low EMI
⢠RoHS compliant
TYPICAL APPLICATIONS
⢠ZVS phase shifted and other full bridge
⢠Half bridge
⢠High power PFC boost
⢠Welding
⢠UPS, solar, and other inverters
⢠High frequency, high efï¬ciency industrial
Absolute Maximum Ratings
Symbol Parameter
Ratings
Vces
Collector Emitter Voltage
900
IC1
Continuous Collector Current @ TC = 25°C
78
IC2
Continuous Collector Current @ TC = 100°C
43
ICM
Pulsed Collector Current 1
129
VGE
Gate-Emitter Voltage 2
±30
PD
Total Power Dissipation @ TC = 25°C
337
SSOA Switching Safe Operating Area @ TJ = 150°C
129A @ 900V
TJ, TSTG Operating and Storage Junction Temperature Range
-55 to 150
TL
Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
300
Static Characteristics
Symbol Parameter
TJ = 25°C unless otherwise speciï¬ed
Test Conditions
Min Typ Max
VBR(CES) Collector-Emitter Breakdown Voltage
VCE(on)
VGE(th)
ICES
Collector-Emitter On Voltage
Gate Emitter Threshold Voltage
Zero Gate Voltage Collector Current
IGES
Gate-Emitter Leakage Current
Thermal and Mechanical Characteristics
VGE = 0V, IC = 1.0mA
VGE = 15V,
IC = 47A
TJ = 25°C
TJ = 125°C
VGE =VCE , IC = 1mA
VCE = 900V,
TJ = 25°C
VGE = 0V
TJ = 125°C
VGS = ±30V
Symbol Characteristic
RθJC
RθJC
WT
Torque
Junction to Case Thermal Resistance (IGBT)
Junction to Case Thermal Resistance (Diode)
Package Weight
Mounting Torque (TO-247 Package), 4-40 or M3 screw
900
3
Min
-
-
-
2.5
3.1
2.2
4.5
6
350
1500
±100
Typ Max
-
0.37
-
0.80
5.9
-
10
Unit
V
A
V
W
°C
Unit
V
μA
nA
Unit
°C/W
g
in·lbf
Microsemi Website - http://www.microsemi.com
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