APT43GA90BD30 Datasheet, PDF (2/9 Pages) Microsemi Corporation – High Speed PT IGBT

Dynamic Characteristics
T_J = 25°C unless otherwise specified
APT43GA90BD30
Symbol Parameter
Test Conditions
Min Typ Max Unit
C_ies
C_oes
C_res
Q_g2
Q_ge
Q_gc
SSOA
t_d(on)
t_r
t_d(off)
t_f
E_on2
E⁵
off
t_d(on
t_r
t_d(off)
t_f
E_on2
E⁵
off
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate- Collector Charge
Switching Safe Operating Area
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Capacitance
2465
V_GE = 0V, V_CE = 25V
f = 1MHz
227
pF
34
Gate Charge
116
V_GE = 15V
18
V_CE= 450V
44
nC
I_C = 25A
T_J = 150°C, R_G = 4.7Ω, V_GE = 15V,
129
A
L= 100uH, V_CE = 900V
Inductive Switching (25°C)
12
V_CC = 600V
V_GE = 15V
16
ns
82
I_C = 25A
57
R_G = 4.7Ω³
T_J = +25°C
875
μJ
425
Inductive Switching (125°C)
12
V_CC = 600V
V_GE = 15V
I_C = 25A
R_G = 4.7Ω³
T_J = +125°C
16
ns
117
129
1660
μJ
1000
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. See Mil-Std-750 Method 3471
3 R_G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
4 E_on1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on switching loss. It is
measured by clamping the inductance with a silicon carbide Schottky diode.
5 E_off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.