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APT40N60B2CF Datasheet, PDF (4/5 Pages) Advanced Power Technology – Super Junction FREDFET
Graph removed
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
ID = 40A
12
VDS=120V
VDS=300V
8
VDS=480V
4
0
0
50 100 150 200 250 300
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
180
160
140
td(off)
120
100
80
VDD = 400V
RG = 5Ω
TJ = 125°C
L = 100µH
60
40
td(on)
20
0
0 10 20 30 40 50 60 70
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
2500
2000
VDD = 400V
RG = 5Ω
TJ = 125°C
L = 100µH
1500
Eon includes
diode reverse recovery.
Eon
1000
500
Eoff
0
0 10 20 30 40 50 60 70
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
30,000
10,000
APT40N60B2CF(G)_LCF(G)
Ciss
1,000
Coss
100
Crss
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
80
VDD = 400V
70 RG = 5Ω
TJ = 125°C
60 L = 100µH
50
tf
40
tr
30
20
10
0
0 10 20 30 40 50 60 70
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2500
2000
1500
Eon
Eoff
1000
500
VDD = 400V
ID = 40A
TJ = 125°C
L = 100µH
Eon includes
diode reverse recovery.
0
0
10
20
30
40
50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE