APT40N60B2CF Datasheet, PDF (2/5 Pages) Advanced Power Technology – Super Junction FREDFET

DYNAMIC CHARACTERISTICS
APT40N60B2CF(G)_LCF(G)
Symbol
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_on
E_off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge ³
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Turn-on Switching Energy ⁶
Turn-off Switching Energy
Test Conditions
V_GS = 0V
V_DS = 25V
f = 1 MHz
V_GS = 10V
V_DD = 300V
I_D = 40A @ 25°C
RESISTIVE SWITCHING
V_GS = 15V
V_DD = 380V
I_D = 40A @ 25°C
R_G = 1.8Ω
INDUCTIVE SWITCHING @ 25°C
V_DD = 400V, V_GS = 15V
I_D = 40A, R_G = 5Ω
INDUCTIVE SWITCHING @ 125°C
V_DD = 400V, V_GS = 15V
I_D = 40A, R_G = 5Ω
MIN
TYP
5040
1365
80
185
36
115
12
15
60
6.4
725
365
1195
440
MAX
UNIT
pF
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
I_S
Continuous Source Current (Body Diode)
I_SM
Pulsed Source Current ¹ (Body Diode)
V_SD
Diode Forward Voltage ² (V_GS = 0V, I_S = -40A)
dv_/dt
Peak Diode Recovery ^dv/_dt ⁵
Reverse Recovery Time
t _rr
(I_S = -40A, ^di/_dt = 100A/µs)
T_{j = 25°C}
T_{j = 125°C}
Reverse Recovery Charge
Q _rr
(I_S = -40A, ^di/_dt = 100A/µs)
T_{j = 25°C}
T_{j = 125°C}
I_RRM
Peak Recovery Current
(I_S = -40A, ^di/_dt = 100A/µs)
T_{j = 25°C}
T_{j = 125°C}
MIN TYP MAX UNIT
40 _Amps
80
2.4 Volts
40
V/ns
195
ns
290
1.8
µC
3.5
17
Amps
22
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN TYP MAX UNIT
R_θJC
R_θJA
Junction to Case
Junction to Ambient
0.30
31
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4
5
S_ddvet/av_dri_ttcinneugimtsTeb_{j le=f.r+s2ISr5e≤}°flCec,_{-tLIDth4=e01Al3im.8dit0ia/}m_{dtitoH≤n,sR7oG0f0=thA2e/µ5ts}Ω_es,tPVcReira≤cku4iIt_{L8r0=aVth1e0rATtJh≤an1t2h5e°C}
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitive avalanche causes additional power losses that can be calcu-
lated as P_AV = E_AR*f
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.30
0.9
0.25
0.7
0.20
0.15
0.5
Note:
0.10
0.3
t1
t2
0.05
0.1
SINGLE PULSE
Duty Factor D = ^t1/t2
0.05
Peak T_J = P_DM x Z_θJC + TC
0
10^-5
10^-4
10^-3
10^-2
10^-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION