APT40N60B2CF Datasheet, PDF (1/5 Pages) Advanced Power Technology – Super Junction FREDFET

600V 40A 0.110Ω
APT40N60B2CF APT40N60LCF
APT40N60B2CFG* APT40N60LCFG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
COOLMOS
Power Semiconductors
• Ultra Low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• Extreme ^dv/dt Rated
Super Junction FREDFET
• Intrinsic Fast-Recovery Body Diode
• Extreme Low Reverse Recovery Charge
• Ideal For ZVS Applications
• Popular T-MAX™ or TO-264 Package
Unless stated otherwise, Microsemi discrete FREDFETs contain a single FREDFET die. This device is made with two
parallel FREDFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
T-Max^TM
TO-264
D
G
S
MAXIMUM RATINGS
All Ratings: T_C = 25°C unless otherwise specified.
Symbol Parameter
APT40N60B2CF(G)_LCF(G) UNIT
V_{DSS Drain-Source Voltage}
600
Volts
I_D
Continuous Drain Current @ T_C = 25°C
Continuous Drain Current @ T_C = 100°C
I_DM
Pulsed Drain Current ¹
V_{GS Gate-Source Voltage Continuous}
40
26
Amps
80
±30
Volts
P_D
Total Power Dissipation @ T_C = 25°C
Linear Derating Factor
417
Watts
3.33
W/°C
T_J,T_STG
T_L
dv/dt
I_AR
E_AR
E_AS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V_DS = 480V, I_D = 40A, T_J = 125°C)
Avalanche Current ⁷
Repetitive Avalanche Energy ⁷
Single Pulse Avalanche Energy ⁴
-55 to 150
260
80
20
1
690
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BV_DSS
R_DS(on)
I_DSS
I_GSS
V_GS(th)
Drain-Source Breakdown Voltage (V_GS = 0V, I_D = 500µA)
Drain-Source On-State Resistance ² (V_GS = 10V, I_D = 20A)
Zero Gate Voltage Drain Current (V_DS = 600V, V_GS = 0V)
Zero Gate Voltage Drain Current (V_DS = 600V, V_GS = 0V, T_C = 150°C)
Gate-Source Leakage Current (V_GS = ±20V, V_DS = 0V)
Gate Threshold Voltage (V_DS = V_GS, I_D = 2mA)
600
0.110
4.2
3400
±100
3
4
5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG."
Volts
Ohms
µA
nA
Volts