MRF607 Datasheet, PDF (3/4 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF607
P_IN
(R_S=50 OHMS)
L3
C1
L1
C2
L4
C5
C6
+
V_cc = 12.5 V
-
L2
C4
P_OUT
(R_L=50 OHMS)
C3
Figure 1 - 175 MHz RF AMPLIFIER CIRCUIT FOR G_PE,
AND EFFICIENCY SPECIFICATIONS.
C1
2.7-15 pF, ARCO 461
C2
9.0-180 pF, ARCO 463
C3, C4 5.0-80 pF ARCO 462
C5
1000 pF UNELCO
C6
5 µF, 25 Vdc,
.
MSC1322.PDF 10-25-99
L1
1 TURN #20 AWG, 3/8” I.D.
L2
3 TURNS #20 AWG, 3/8” I.D.
L3
0.22 µH MOLDED CHOKE
L4
0.15 µH MOLDED CHOKE WITH
TANTALUM FERROXCUBE 56-590-65-3B
BEAD ON GROUND LEAD