MRF607 Datasheet, PDF (1/4 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
MRF607
Features
• 12.5V Silicon NPN, To-39 packaged VHF & UHF Transistor
• 1.75 Watt Minimum Power Output @ 12.5V, 175 MHz
• 11.5 minimum Gain @ 12.5V, 175 MHz
• 50% Efficiency @ 12.5V, 175 MHz
12
3
1. EMITTER
2. BASE
3. COLLECTOR
TO-39
(common collector)
DESCRIPTION:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and
output stages.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Thermal Data
P
D
Total Device Dissipation @ T_A = 25ºC
Derate above 25ºC
Value
16
36
4.0
330
3.5
28
Unit
Vdc
Vdc
Vdc
mA
Watts
mW/ ºC
MSC1322.PDF 10-25-99