MRF607 Datasheet, PDF (2/4 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
Test Conditions
BVCES
BVCEO
BVEBO
ICEO
(on)
HFE
Collector-Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0 Vdc)
Collector-Emitter Sustaining Voltage
(IC=25 mAdc, IB=0)
Emitter-Base Breakdown Voltage
(IE = .5 mA, IC = 0)
Collector Cutoff Current
(VCE = 10 Vdc, IB = 0)
DC Current Gain
(IC = 50 mAdc, VCE = 5.0 Vdc)
MRF607
Min.
36
16
4.0
-
Value
Typ.
-
-
-
-
Max.
-
-
-
.3
20
-
150
Unit
Vdc
Vdc
Vdc
mA
-
DYNAMIC
Symbol
Test Conditions
COB
Output Capacitance
(VCB = 12 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL
Symbol
Test Conditions
GPE
Power Gain
Collector Efficiency
ηC
Test Circuit-Figure 1
Pout = 1.75W, VCE =
12.5Vdc
f = 175 MHz
Test Circuit-Figure 1
Pout = 1.75W, VCE =
12.5Vdc
f = 175 MHz
MSC1322.PDF 10-25-99
Value
Min.
Typ.
Max.
Unit
-
-
15
pF
Value
Min.
Typ.
Max.
Unit
11.5
-
-
dB
50
-
-
%