MRF559 Datasheet, PDF (3/5 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF559
FUNCTIONAL
Symbol
Test Conditions
Power Gain
GPE
Test Circuit-Figure 1
Pout = 0.5 W, VCE =12.5Vdc
MHz
MHz
Collector Efficiency Test Circuit-Figure 1
η
Pout = 0.5 W, VCE =12.5Vdc
MHz
MHz
Typical Performance @ VCC = 7.5V
Power Gain
GPE
Test Circuit-Figure 1
Pout = 0.5 W, VCE =7.5Vdc
MHz
Collector Efficiency Test Circuit-Figure 1
η
Pout = 0.5 W, VCE =7.5Vdc
MHz
f = 870
f = 512
f = 870
f = 512
f = 870 MHz
f = 512
f = 870 MHz
f = 512
Min.
8.0
-
50
-
-
-
-
-
Value
Typ.
9.5
13
Max. Unit
-
dB
65
-
%
60
6.5
-
dB
10
-
70
-
%
65
-
Figure 2. 870 MHz Test Fixture
C1, C2, C4, C5 — 1.0–10 pF Johanson
C7 — 1.0 µF Tantalum
L2, L3 — Ferrite Bead
Z2 — 30 Ω 2.5 cm
Z4 — 50 Ω 1.2 cm
Microstrip Elements — ε r = 2.55
C3, C6 — 0.001 µF Chip Capacitor
L1, L4 — 4 Turns #26 AWG, 0.3 cm ID, 0.4 cm Long
Z1 — 50 Ω 1.5 cm
Z3 — 50 Ω 2.0 cm
Z5, Z6 — 50 Ω 1.25 cm
MSC1317.PDF 10-25-99