MRF559 Datasheet, PDF (2/5 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF559
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
Test Conditions
BVCEO
BVCBO
BVEBO
ICES
(on)
HFE
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, IB = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc)
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
DYNAMIC
Symbol
Test Conditions
COB
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
Value
Min.
Typ.
Max.
Unit
16
-
-
Vdc
30
-
-
Vdc
3.0
-
-
Vdc
-
-
1.0
mA
30
-
200
-
Value
Min.
Typ.
Max.
Unit
-
2.5
3.0
pF
MSC1317.PDF 10-25-99