MRF559 Datasheet, PDF (1/5 Pages) Microsemi Corporation – RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: [phone]
FAX: [phone]
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
MRF559
Features
• Specified @ 12.5 V, 870 MHz Characteristics
• Output Power = .5 W
• Minimum Gain = 8.0 dB
• Efficiency 50%
• Cost Effective Macro X Package
• Electroless Tin Plated Leads for Improved Solderability
Macro X
DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
Thermal Data
P
D
Tstg
Total Device Dissipation @ TC = 75ºC
Derate above 75ºC
Storage Temperature Range
Value
16
30
3.0
150
2.0
20
-65 to +150
Unit
Vdc
Vdc
Vdc
mA
Watts
mW/ ºC
ºC
MSC1317.PDF 10-25-99