DRF1300_0912 Datasheet, PDF (3/4 Pages) Microsemi Corporation – MOSFET Push-Pull Hybrid

DRF1300
Figure 1, DRF1300 Circuit Diagram
The DRF1300 is configured as a Push Pull Hybrid incorporating two independent channels configured with a common source each consisting of a
driver, a high voltage MOSFET and by-pass capacitors. The function of the by-pass capacitors C1 and C2 is to reduce the internal parasitic loop
inductance. This coupled with the tight geometry of the hybrid allows optimal gate drive to the MOSFET. This low parasitic approach coupled
with the Schmitt trigger input (IN), Kelvin signal ground (SG) and the Anti-Ring function; provide improved stability and control in Kilowatt to Multi-
Kilowatt high frequency applications. The IN pin should be referenced to the Kelvin Ground (SG) and is applied to a Schmitt Trigger. The SG
pin is a Kelvin return for the IN pin only. The signal is then applied to the intermediate drivers and level shifters; this section contains proprietary
circuitry designed specifically for ring abatement. To further increase the utility of the device the driver die and the MOSFET die are adjacent die
selected. This provides a very close match in the turn on and propagation delays.
Figure 2, DRF1300 Test Circuit
The test circuit illustrated in Figure 2 was used to evaluate the DRF1300 (available as an evaluation board DRF13XX/EVALSW.) The input
control signal is applied via IN and SG pins using RG188. This provides excellent noise immunity and control of the signal ground currents.
The +V_DD inputs (pins 2, 6, 8 and 12) should be heavily by-passed by 1uF capacitors as close to the pins as possible. The capacitors used
for this function must be capable of supporting the RMS currents and frequency of the gate load. R_L set for I_DM at V_DS max this load is used to
evaluate the output performance.
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